NTE64 Silicon NPN Transistor UHF High Speed Switch
Description: The NTE64 is a silicon NPN high frequency transistor designed primarily for use in high-gain, low noise small-signal amplifiers and applications requiring fast switching times. Features: D High Current Gain-Bandwidth Product: fT = 4.5GHz Typ @ IC = 15mA D Low Noise Figure: NF = 2dB Typ @ f = 1GHz D High Power Gain: Gpe = 10dB Min @ f = 1GHz D Third Order Intercept: +23dBm Typ Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.375W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300C/W Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)CEO IC = 1mA, IB = 0 V(BR)CBO IC = 0.1mA, IE = 0 V(BR)EBO IE = 0.1mA, IC = 0 ICBO VCB = 15V, IE = 0 15 25 2 - - - - - - - - 50 V V V nA Symbol Test Conditions Min Typ Max Unit
Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified)
Parameter ON Characteristics DC Current Gain Dynamic Characteristics Current Gain-Bandwidth Product Collector-Base Capacitance Noise Figure Functional Tests Common-Emitter Amplifier Power Gain Third Order Intercept Gpe VCC = 6V, IC = 5mA, f = 1GHz IC = 5mA, VCE = 6V, f = 0.9GHz 10 - 12 +23 - - dB dBm fT Ccb NF IC = 15mA, VCE = 10V, f = 1GHz VCB = 10V, IE = 0, f = 1MHz IC = 5mA, VCE = 6V, f = 1GHz - - - 4.5 0.4 2.0 - 1.0 2.5 GHz pF dB hFE IC = 5mA, VCE = 5V 30 80 200 Symbol Test Conditions Min Typ Max Unit
.075 (1.9) Min
C Seating Plane .770 (19.5) Max E E .190 (4.83) Dia .325 (8.27) Max B
.036 (0.92)
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